Physical Vapor Transport (PVT) Crystal Growing

Product

Function

Parallel

Physical Vapor Transport (PVT) Crystal Growing

Double quartz tube for SiC crystal growth, better design with stable performance.

Our Products

Integrated design

Integrated design to reduce 30% area.

Top cover ring design

Solve the double quartz broken problem
Reduce the maintenance time

Explosion-proof outer tube

Fix the external tube explosion problem
Safe production

Our Innovation

Axial and Radial Temp Control Separate

Note: A single furnace type does not necessarily involve all technologies, it is for reference only, please call HIPER for details

[Axis-diameter separation] The technology is applied to the resistive crystal growth furnace to completely solve the temperature coupling phenomenon in the direction of the shaft-diameter. Adjust the axial temperature gradient to increase the crystal growth rate, and the radial temperature gradient will also change accordingly, resulting in unevenness of the crystal growth interface, increased stress, and increased crystal defects. The resistance type crystal growth furnace can control the temperature of the seed crystal area and the source material area separately through the resistance heating in different areas, and achieve the separation of the axial temperature gradient and the radial temperature gradient, thereby stabilizing the crystal growth surface shape and greatly improving the crystal growth rate. Growth rate.

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